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Subpicosecond electrooptic sampling: principles and applications

Author
VALDMANIS, J. A; MOUROU, G
Univ. Rochester, lab. laser energetics
Source

IEEE journal of quantum electronics. 1986, Vol 22, Num 1, pp 69-78 ; ref : 37 ref

CODEN
IEJQA7
ISSN
0018-9197
Scientific domain
Electronics; Optics; Telecommunications
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Circuit intégré Circuit rapide Dispositif optoélectronique Dispositif photoélectrique Dispositif électrooptique Echantillonnage Effet Pockels Gallium Arséniure Mesure Photodiode Réponse transitoire Subpicoseconde Transistor effet champ dopage modulé Transistor effet champ
Keyword (en)
Integrated circuit Fast circuit Optoelectronic device Photoelectric cell Electrooptical device Sampling Pockels effect Gallium Arsenides Measurement Photodiode Transient response Subpicosecond Modulation doped field effect transistor Field effect transistor
Keyword (es)
Muestrario Medida
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02C Optical and optoelectronic circuits / 001D03G02C4 Miscellaneous

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
8658530

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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