Heteroepitaxial growth of high mobility InAsP from the vapor phase
- Author
- WANG, P. J1 ; WESSELS, B. W
[1] Northwestern univ., materials res. center, Evanston IL 60201, United States - Source
Applied physics letters. 1984, Vol 44, Num 8, pp 766-768 ; ref : 10 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Centre donneur Couche mince Diffusion porteur charge Dépôt chimique phase vapeur Dépôt Epitaxie Fabrication microélectronique Indium Phosphoarséniure Indium Phosphure Mobilité porteur charge Photoluminescence Substrat
- Keyword (en)
- Donor center Thin film Charge carrier scattering Chemical vapor deposition Deposition Epitaxy Microelectronic fabrication Indium Arsenides phosphides Indium Phosphides Charge carrier mobility Photoluminescence Substrate
- Keyword (es)
- Substrato
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8850285
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.94910 
https://dx.doi.org/10.1063/1.94910
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