GaInNAs/GaAs quantum dots grown by chemical beam epitaxy
- Author
- MAKINO, S1 ; MIYAMOTO, T1 ; KAGEYAMA, T1 ; NISHIYAMA, N1 ; KOYAMA, F1 ; IGA, K1
[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan - Conference title
- Proceedings of the Tenth International Conference on Metalorganic Vapor Phase Epitaxy, Sapporo, Japan, 5-9 June 2000
- Conference name
- ICMOVPE International Conference on Metalorganic Vapor Phase Epitaxy (10 ; Sapporo 2000-06-05)
- Author (monograph)
- ONABE, Kentaro (Editor)2 ; KAWAI, Hiroji (Editor)1
[1] Sony, Yokohama, Japan
[2] University of Tokyo, Tokyo, Japan - Source
Journal of crystal growth. 2000, Vol 221, pp 561-565 ; ref : 20 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Autoassemblage Caractérisation Caractéristique électrique Composition chimique Couche mince Croissance cristalline en phase vapeur Diode laser Epitaxie jet chimique Etude expérimentale Fabrication microélectronique Gallium arséniure Gallium nitrure Indium arséniure Indium nitrure Laser cavité verticale Laser émission surface Multicouche Photoluminescence Point quantique Semiconducteur III-V As Ga In N GaInNAs Composé minéral
- Keyword (en)
- Self assembly Characterization Electrical characteristic Chemical composition Thin films Crystal growth from vapors Laser diodes Chemical beam epitaxy Experimental study Microelectronic fabrication Gallium arsenides Gallium nitrides Indium arsenides Indium nitrides Vertical cavity laser Surface emitting lasers Multilayers Photoluminescence Quantum dots III-V semiconductors Inorganic compounds
- Keyword (es)
- Autoensamble Caracterización Característica eléctrica Fabricación microeléctrica Laser cavidad vertical
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics : optics Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 887364
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(00)00778-8 
https://dx.doi.org/10.1016/S0022-0248(00)00778-8
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