Hot-carrier effects in submicrometre MOS VLSIs
- Author
- TAKEDA, E1
[1] Hitachi ltd., Tokyo 185, Japan - Source
IEE proceedings. Part I. Solid-state and electron devices. 1984, Vol 131, Num 5, pp 153-162 ; ref : 29 ref
- CODEN
- IPIDD9
- ISSN
- 0143-7100
- Scientific domain
- Electronics; Computer science; Atomic molecular physics; Condensed state physics
- Publisher
- Institution of Electrical Engineers, Publishing Department, Stevenage, Herts
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Analyse fonctionnement Barrière potentiel Circuit VLSI Circuit intégré Diffusion Dopage Fabrication microélectronique Porteur charge Porteur chaud Tension polarisation Transistor MOS Transistor effet champ
- Keyword (en)
- Operation study Potential barrier VLSI circuit Integrated circuit Diffusion Doping Microelectronic fabrication Charge carrier Hot carrier Bias voltage MOS transistor Field effect transistor
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8877730
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1049/ip-i-1.1984.0041 
https://dx.doi.org/10.1049/ip-i-1.1984.0041
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