Electronic properties of doped semiconductors
- Author
- SHKLOVSKII, B. I; EFROS, A. L
Acad. sci. U.S.S.R., A.F. Ioffe physico-tech. inst., Leningrad 194021, Ussr - Source
Springer series in solid-state sciences. 1984, Vol 45 ; XII-388 p ; ref : 27 p
- CODEN
- SSSSDV
- ISSN
- 0171-1873
- Scientific domain
- Crystallography; Condensed state physics
- Publisher
- Springer, Berlin
/
Springer, Heidelberg
/
Springer, New York, NY
- Publication country
- Germany
- Document type
- Serial Issue
- Language
- English
- Keyword (fr)
- Conductivité électrique Dopage Ouvrage didactique Structure électronique
- Keyword (en)
- Electrical conductivity Doping Handbook Electronic structure
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20F Low-field transport and mobility; piezoresistance
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8883600
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/978-3-662-02403-4_11 
https://dx.doi.org/10.1007/978-3-662-02403-4_11
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