Use of Raman scattering to investigate disorder and crystallite formation in as-deposited and annealed carbon films
- Author
- DILLON, R. O1 ; WOOLLAM, J. A; KATKANANT, V
[1] Univ. Nebraska, dep. electrical eng., Lincoln NE 68588, United States - Source
Physical review. B, Condensed matter. 1984, Vol 29, Num 6, pp 3482-3489 ; ref : 13 ref
- CODEN
- PRBMDO
- ISSN
- 0163-1829
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- American Institute of Physics, Woodbury, NY
/
American Physical Society, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Carbone Condensation plasma Couche mince Cristallisation Cristallite Décharge haute fréquence Etat amorphe Etude expérimentale Non métal Pulvérisation faisceau ionique Recuit Spectre Raman Traitement thermique
- Keyword (en)
- Carbon Plasma condensation Thin film Crystallization Crystallites High frequency discharge Amorphous state Experimental study Non metal Ion beam sputtering Annealing Raman spectrum Heat treatment
- Keyword (es)
- Estudio experimental
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8888848
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.29.3482 
https://dx.doi.org/10.1103/PhysRevB.29.3482
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