The importance of the anode field in controlling the generation rate of the donor states at the Si-SiO2 interface
- Author
- FISCHETTI, M. V1
[1] IBM Thomas J. Watson res. center, Yorktown Heights NY 10598, United States - Source
Journal of applied physics. 1984, Vol 56, Num 2, pp 575-577 ; ref : 20 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Basse température Capacité MOS Centre donneur Champ électrique Contact isolant semiconducteur Génération porteur charge Silicium Oxyde Silicium Structure MOS
- Keyword (en)
- Low temperature MOS capacity Donor center Electric field Semiconductor insulator contact Charge carrier generation Silicon Oxides Silicon MOS structure
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8907506
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.333953 
https://dx.doi.org/10.1063/1.333953
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