Electron scattering mechanisms in n-type indium selenide
- Author
- SEGURA, A1 ; POMER, F; CANTARERO, A; KRAUSE, W; CHEVY, A
[1] Univ. Valencia, fac. cienc. fisicas, dep. electricidad magnetismo, Burjasot, Spain - Source
Physical review. B, Condensed matter. 1984, Vol 29, Num 10, pp 5708-5717 ; ref : 33 ref
- CODEN
- PRBMDO
- ISSN
- 0163-1829
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- American Institute of Physics, Woodbury, NY
/
American Physical Society, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Basse température Composé minéral Diffusion porteur charge Effet Hall Etude expérimentale Haute température Indium Séléniure Interaction électron phonon Magnétoconductivité Mobilité porteur charge Monocristal Semiconducteur
- Keyword (en)
- Low temperature Inorganic compound Charge carrier scattering Hall effect Experimental study High temperature Indium Selenides Electron phonon interaction Magnetoconductivity Charge carrier mobility Single crystal Semiconductor materials
- Keyword (es)
- Estudio experimental
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20M Galvanomagnetic and other magnetotransport effects
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8909320
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.29.5708 
https://dx.doi.org/10.1103/PhysRevB.29.5708
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