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Studies of the earliest stages of plasma-enhanced chemical vapor deposition of SiO2 on polymeric substrates

Author
DENNLER, G1 ; HOUDAYER, A2 ; LATRECHE, M3 ; SEGUI, Y4 ; WERTHEIMER, M. R1
[1] Groupe des Couches Minces (GCM) and Department of Engineering Physics and Materials Engineering, Ecole Polytechnique, C.P. 6079, Station Centre-Ville, Montreal, QC H3C 3A7, Canada
[2] Groupe des Couches Minces (GCM) and Department of Physics, Université de Montréal, Montreal, QC H3C 3J7, Canada
[3] Polyplasma Inc., 3740 Jean Brillant, Montreal, QC H3T 1P1, Canada
[4] Laboratoire de Génie Electrique de Toulouse (LGET), Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse, France
Source

Thin solid films. 2001, Vol 382, Num 1-2, pp 1-3 ; ref : 11 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Elsevier Science, Lausanne
Publication country
Switzerland
Document type
Article
Language
English
Keyword (fr)
Couche ultramince Croissance cristalline en phase vapeur Ethylène téréphtalate polymère Etude expérimentale Gravure ionique réactive Imide polymère Matériau semiconducteur Mécanisme croissance Méthode PECVD Polymère Propène polymère RBS Rayon X Revêtement Silicium oxyde Spectrométrie photoélectron Structure Substrat O Si SiO2 Substrat imide polymère Substrat propène polymère Substrat éthylène téréphtalate polymère Composé minéral Oxyde
Keyword (en)
Ultrathin films Crystal growth from vapors Ethylene terephthalate polymer Experimental study Reactive ion etching Polyimides Semiconductor materials Growth mechanism PECVD Polymers Polypropylene RBS X radiation Coatings Silicon oxides Photoelectron spectroscopy Structure Substrates Inorganic compounds Oxides
Keyword (es)
Etileno tereftalato polímero Grabado iónico reactivo Mecanismo crecimiento Estructura
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Pacs
8115G Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
892757

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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