The electrical properties of dislocations in semiconductors
- Author
- OURMAZD, A1
[1] Univ., dep. electronics, Southampton, United Kingdom - Source
Contemporary physics. 1984, Vol 25, Num 3, pp 251-268 ; ref : 24 ref
- Publisher
- Taylor & Francis, London
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Article synthèse Conductivité hyperfréquence Conductivité électrique Dislocation Effet Hall Etude théorique Niveau défaut cristallin Semiconducteur Spectrométrie transitoire niveau profond
- Keyword (en)
- Review Microwave conductivity Electrical conductivity Dislocation Hall effect Theoretical study Crystal defect level Semiconductor materials Deep level transient spectrometry
- Keyword (es)
- Articulo sintesis
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8929114
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1080/00107518408210707 
https://dx.doi.org/10.1080/00107518408210707
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