The density of states at GaAs/negative oxide interfaces
- Author
- AHRENKIEL, R. K1 ; DUNLAVY, D. J
[1] Solar energy res. inst., Golden CO 80401, United States - Source
Solid-state electronics. 1984, Vol 27, Num 5, pp 485-489 ; ref : 14 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractéristique capacité tension Contact isolant semiconducteur Contact électrique Densité état Etat électronique interface Gallium Arséniure Oxyde Structure MIS
- Keyword (en)
- Voltage capacity curve Semiconductor insulator contact Electric contact Density of states Interface electron state Gallium Arsenides Oxides MIS structure
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8936039
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0038-1101(84)90157-6 
https://dx.doi.org/10.1016/0038-1101(84)90157-6
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