An efficient room-temperature silicon-based light-emitting diode
- Author
- WAI LEK MG1 ; LOURENCO, M. A1 ; GWILLIAM, R. M1 ; LEDAIN, S2 ; SHAO, G2 ; HOMEWOOD, K. P1
[1] School of Electronic Engineering, Information Technology & Mathematics, University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom
[2] School of Mechanical and Materials Engineering, University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom - Source
Nature (London). 2001, Vol 410, Num 6825, pp 192-194 ; ref : 10 ref
- CODEN
- NATUAS
- ISSN
- 0028-0836
- Scientific domain
- Multidisciplinary
- Publisher
- Nature Publishing, London
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Boucle dislocation Circuit ULSI Diode électroluminescente Implantation ion Jonction p n Procédé fabrication Température ambiante
- Keyword (en)
- Dislocation loop ULSI circuit Light emitting diode Ion implantation p n junction Manufacturing process Room temperature
- Keyword (es)
- Bucle dislocación Circuito ULSI Diodo electroluminescente Implantación ión Unión p n Procedimiento fabricación Temperatura ambiente
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 899279
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1038/35065571 
https://dx.doi.org/10.1038/35065571
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