The improvement of the SiO2/InAs interface properties with the aid of fast electron irradiation in a direct current sputter deposition system
- Author
- PARM, I. O1 ; YONGHAN ROH2 ; BYUNGYOU HONG2 ; CHEON SEOK PARK2 ; JUNSIN YI2
[1] Institute of Semiconductor Physics, 13 Lavrentyev Avenue, Novosibirsk 630090, Russian Federation
[2] School of Electrical and Computer Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangang-gu, Suwon, Korea, Republic of - Source
Applied surface science. 2001, Vol 172, Num 3-4, pp 295-300 ; ref : 16 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- Russian
- Keyword (fr)
- Caractéristique capacité tension Caractéristique électrique Etude expérimentale Indium arséniure Interface semiconducteur isolant Irradiation électron Propriété diélectrique Revêtement pulvérisation Silicium oxyde Structure MIS Structure interface Structure électronique Composé minéral
- Keyword (en)
- CV characteristic Electrical characteristic Experimental study Indium arsenides Semiconductor-insulator boundaries Electron irradiation Dielectric properties Sputtered coatings Silicon oxides MIS structures Interface structure Electronic structure Inorganic compounds
- Keyword (es)
- Característica eléctrica Irradiación electrón
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures / 001B70C40Q Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 902126
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0169-4332(00)00877-1 
https://dx.doi.org/10.1016/S0169-4332(00)00877-1
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