The growth and characterization of HgTe epitaxial layers made by organometallic epitaxy
- Author
- BHAT, I1 ; GHANDHI, S. K
[1] Rensselaer polytech. inst., Troy NY 12181, United States - Source
Journal of the Electrochemical Society. 1984, Vol 131, Num 8, pp 1923-1926 ; ref : 10 ref
- CODEN
- JESOAN
- ISSN
- 0013-4651
- Scientific domain
- General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
- Publisher
- Electrochemical Society, Pennington, NJ
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé minéral Composé organométallique Concentration porteur charge Couche mince Croissance cristalline Dépôt chimique phase vapeur Epitaxie Etude expérimentale Mercure II Tellurure Mobilité Hall Support CdTe
- Keyword (en)
- Inorganic compound Organometallic compound Charge carrier concentration Thin film Crystal growth Chemical vapor deposition Epitaxy Experimental study Mercury II Tellurides Hall mobility
- Keyword (es)
- Estudio experimental
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 9027615
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1149/1.2115992 
https://dx.doi.org/10.1149/1.2115992
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