The dynamics of photoexcited carriers in microcrystalline silicon
- Author
- KOMURO, S1 ; AOYAGI, Y; SEGAWA, Y; NAMBA, S; MASUYAMA, A; MATSUDA, A; TANAKA, K
[1] Inst. physical chemical res., Wako-shi Saitama 351, Japan - Source
Journal of applied physics. 1984, Vol 56, Num 6, pp 1658-1662 ; ref : 25 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Diffraction onde Diffusion Durée vie Etude expérimentale Microcristal Photogénération Porteur charge Rayonnement IR Semiconducteur Silicium
- Keyword (en)
- Wave diffraction Diffusion Lifetime Experimental study Microcrystal Photogeneration Charge carrier Infrared radiation Semiconductor materials Silicon
- Keyword (es)
- Tiempo vida Estudio experimental
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20J Charge carriers: generation, recombination, lifetime, and trapping
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 9042568
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.334154 
https://dx.doi.org/10.1063/1.334154
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