AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate
- Author
- WINDHORN, T. H1 ; METZE, G. M; TSAUR, B.-Y; FAN, J. C. C
[1] MIT, Lincoln lab., Lexington MA 02173, United States - Source
Applied physics letters. 1984, Vol 45, Num 4, pp 309-311 ; ref : 6 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Circuit intégré monolithique Fabrication Hétérojonction double Laser injection Laser semiconducteur AlGaAs
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Monolithic integrated circuit Manufacturing Double heterojunction Injection laser Semiconductor laser
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 9081590
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.95273 
https://dx.doi.org/10.1063/1.95273
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