Carrier transport at grain boundaries in semiconductors
- Author
- MATARE, H. F1
[1] International solid state electronics consultants, Los Angeles CA 90049, United States - Source
Journal of applied physics. 1984, Vol 56, Num 10, pp 2605-2631 ; ref : 156 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Article synthèse Bicristal Composé III-V Conductivité électrique Diffusion porteur charge Dislocation Effet photovoltaïque Etude théorique Joint grain Photoconductivité Polycristal Recombinaison porteur charge Semiconducteur Silicium
- Keyword (en)
- Review Bicrystal III-V compound Electrical conductivity Charge carrier scattering Dislocation Photovoltaic effect Theoretical study Grain boundary Photoconductivity Polycrystal Charge carrier recombination Semiconductor materials Silicon
- Keyword (es)
- Articulo sintesis
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20F Low-field transport and mobility; piezoresistance
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 9088505
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.333793 
https://dx.doi.org/10.1063/1.333793
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