Electron mobility in modulation-doped heterostructures
- Author
- WALUKIEWICZ, W1 ; RUDA, H. E; LAGOWSKI, J; GATOS, H. C
[1] Massachusetts inst. technology, Cambridge MA 02139, United States - Source
Physical review. B, Condensed matter. 1984, Vol 30, Num 8, pp 4571-4582 ; ref : 38 ref
- CODEN
- PRBMDO
- ISSN
- 0163-1829
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- American Institute of Physics, Woodbury, NY
/
American Physical Society, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Aluminium Indium Arséniure Mixte Dopage Gallium Arséniure Gallium Indium Arséniure Mixte Gaz électron Hétérojonction Mobilité porteur charge Modulation Système 2 dimensions
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Aluminium Indium Arsenides Mixed Doping Gallium Arsenides Gallium Indium Arsenides Mixed Electron gas Heterojunction Charge carrier mobility Modulation Two dimensional system
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 9107589
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.30.4571 
https://dx.doi.org/10.1103/PhysRevB.30.4571
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