The growth and properties of thin oxide layers on tantalum electrodes
- Author
- MACAGNO, V1 ; SCHULTZE, J. W
[1] Univ. Düsseldorf, inst. physikalische chemie II, Düsseldorf 4000, Germany - Source
Journal of electroanalytical chemistry and interfacial electrochemistry. 1984, Vol 180, Num 1-2, pp 157-170 ; ref : 30 ref
- CODEN
- JEIEBC
- ISSN
- 0022-0728
- Scientific domain
- General chemistry, physical chemistry; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Adsorption Conductivité type n Coulométrie Dégagement gazeux Dégagement électrolytique Effet milieu Electrode Hydrogène Impédance Métal Oxydation anodique Oxyde anodique PH Passivité Potentiel électrique Réaction électrochimique Semiconducteur Tantale Oxyde Tantale Capacité électrode Méthode potentiodynamique
- Keyword (en)
- Adsorption N type conductivity Coulometry Gas release Electrolytic evolution Medium effect Electrodes Hydrogen Impedance Metal Anodization Anodic oxide PH Passivity Electric potential Electrochemical reaction Semiconductor materials Tantalum Oxides Tantalum
- Keyword (es)
- Electrodo Metal PH
- Classification
- Pascal
- 001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry / 001C01H Electrochemistry / 001C01H05 Kinetics and mechanism of reactions
- Discipline
- General chemistry and physical chemistry
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 9114267
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0368-1874(84)83577-7 
https://dx.doi.org/10.1016/0368-1874(84)83577-7
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