The compositional grading of MOCVD-grown GaAs1-xPx via substrate temperature changes
- Author
- LEWIS, C. R1 ; LUDOWISE, M. J
[1] Varian Associates inc., Palo Alto CA 94303, United States - Source
Journal of electronic materials. 1984, Vol 13, Num 5, pp 749-761 ; ref : 9 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composition chimique Composé minéral Composé organométallique Couche mince Croissance cristalline Dépôt chimique phase vapeur Epitaxie Etude expérimentale Gallium Phosphoarséniure Microscopie optique Photoluminescence Solution solide Support Température
- Keyword (en)
- Chemical composition Inorganic compound Organometallic compound Thin film Crystal growth Chemical vapor deposition Epitaxy Experimental study Gallium Arsenides phosphides Optical microscopy Photoluminescence Solid solution Support Temperature
- Keyword (es)
- Composicion quimica Estudio experimental Microscopia optica Temperatura
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 9114484
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF02657924 
https://dx.doi.org/10.1007/BF02657924
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