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An improved TMAH Si-etching solution without attacking exposed aluminum

Author
YAN, Guizhen1 ; CHAN, Philip C. H2 ; HSING, I-Ming3 ; SHARMA, Rajnish K2 ; SIN, Johnny K. O2 ; YANGYUAN WANG1
[1] Institute of Microelectronics, Peking University, Beijing, China
[2] Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong-Kong
[3] Department of Chemical Engineering, HKUST, Hong-Kong
Conference title
Micromechanics Section of Sensors and Actuators. Technical digest
Conference name
IEEE International Workshop on Micro Electro Mechanical Systems (MEMS-2000) (MEMS-2000) (13 ; Miyazaki 2000-01-23)
Author (monograph)
IEEE, International (Funder/Sponsor)
Source

Sensors and actuators. A, Physical. 2001, Vol 89, Num 1-2, pp 135-141 ; ref : 8 ref

ISSN
0924-4247
Scientific domain
Physics
Publisher
Elsevier Science, Lausanne
Publication country
Switzerland
Document type
Conference Paper
Language
English
Keyword (fr)
Aluminium Attaque chimique Dispositif micromécanique Dispositif électromécanique Etude expérimentale Procédé fabrication Silicium
Keyword (en)
Aluminium Chemical etching Micromechanical devices Electromechanical device Experimental study Manufacturing process Silicon
Keyword (es)
Aluminio Ataque químico Dispositivo electromecánico Estudio experimental Procedimiento fabricación Silicio
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D12 Mechanical engineering. Machine design / 001D12I Precision engineering, watch making

Discipline
Electronics Mechanical engineering. Mechanical construction. Handling
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
922028

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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