0.67 μm Room-temperature operation of GaInAsP/AlGaAs lasers on GaAs prepared by LPE
- Author
- KISHINO, K1 ; KOIZUMI, Y; YOKOCHI, A; KINOSHITA, S; TAKO, T
[1] Sophia univ., dep. electrical electronics, Chiyoda-ku Tokyo 102, Japan - Source
Japanese journal of applied physics. 1984, Vol 23, Num 9, pp L740-L742 ; 2 ; ref : 14 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Epitaxie Gallium Indium Phosphoarséniure Mixte Laser semiconducteur Température ambiante GaInAsP
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Epitaxy Gallium Indium Arsenides phosphides Mixed Semiconductor laser Room temperature
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 9273176
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.23.L740 
https://dx.doi.org/10.1143/JJAP.23.L740
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