Feedback control of plasma etching reactors for improved etching uniformity
- Author
- ARMAOU, Antonios1 ; BAKER, James1 ; CHRISTOFIDES, Panagiotis D1
[1] Department of Chemical Engineering, University of California, Los Angeles, CA 90095, United States - Conference title
- Chemical Reaction Engineering: Beyond the Year 2000. Part C
- Conference name
- ISCRE International Symposium on Chemical Reaction Engineering (16 ; Cracow 2000-09-10)
- Author (monograph)
- BURGHARDT, A (Editor)1 ; POHORECKI, R (Editor)2 ; CYBULSKI, A (Editor)3
[1] Polish Academy of Sciences, Institute of Chemical engineering, ul. Baltycka 5, 44-100 Gliwice, Poland
[2] Faculty of Chemical and Process Engineering, Warsaw University of Technology, ul. Warynskiego 1, 00-645 Warsaw, Poland
[3] CHEMIPAN, Institute of Physical Chemistry, Polish Academy of Sciences, ul. Kasprzaka 44/52, 01-224 Warsaw, Poland - Source
Chemical engineering science. 2001, Vol 56, Num 4, pp 1467-1475 ; ref : 20 ref
- CODEN
- CESCAC
- ISSN
- 0009-2509
- Scientific domain
- Chemical engineering
- Publisher
- Elsevier, Oxford
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Boucle réaction Commande processus Commande répartie Couche mince Etat amorphe Fabrication microélectronique Gravure plasma Modèle 2 dimensions Modèle dynamique Modélisation Méthode numérique Pastille électronique Régulateur PI Silicium Système commande Non métal
- Keyword (en)
- Feedback Process control Distributed control Thin film Amorphous state Microelectronic fabrication Plasma etching Two dimensional model Dynamic model Modeling Numerical method Wafer Integral proportional regulator Silicon Control system Non metal
- Keyword (es)
- Retroalimentación Control proceso Control repartido Capa fina Estado amorfo Fabricación microeléctrica Grabado plasma Modelo 2 dimensiones Modelo dinámico Modelización Método numérico Pastilla electrónica Regulador PI Silicio Sistema control No metal
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B50 Physics of gases, plasmas and electric discharges / 001B50B Physics of plasmas and electric discharges / 001B50B77 Plasma applications
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A65 Surface treatments
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics Physics and materials science Physics of gases, plasmas and electric discharges
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 927339
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0009-2509(00)00372-9 
https://dx.doi.org/10.1016/S0009-2509(00)00372-9
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