Electron microscope studies of a Ge―GaAs superlattice grown by molecular beam epitaxy
- Author
- KUAN, T. S; CHANG, C.-A
IBM, Thomas J. Watson res. center - Source
Journal of applied physics. 1983, Vol 54, Num 8, pp 4408-4413 ; ref : 12 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé minéral Condensation faisceau moléculaire Couche mince Epitaxie Etude expérimentale Gallium Arséniure Germanium Image réticulaire Microscopie fond clair Microscopie fond sombre Microscopie électronique transmission Non métal Section efficace Support GaAs Surstructure
- Keyword (en)
- Inorganic compound Molecular beam condensation Thin film Epitaxy Experimental study Gallium Arsenides Germanium Lattice image Bright field microscopy Dark field microscopy Transmission electron microscopy Non metal Cross section Superstructure
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A14 Electron diffraction and scattering
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 9343751
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.332688 
https://dx.doi.org/10.1063/1.332688
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