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Effect of well size fluctuation on photoluminescence spectrum of AlAs―GaAs superlattices

Author
GOLDSTEIN, L; HORIKOSHI, Y; TARUCHA, S; OKAMOTO, H
Musashino electrical communication lab
Source

Japanese journal of applied physics. 1983, Vol 22, Num 10, pp 1489-1492 ; ref : 9 ref

CODEN
JJAPA5
ISSN
0021-4922
Scientific domain
Crystallography; Optics; Condensed state physics; Physics; Plasma physics
Publisher
Japanese journal of applied physics, Tokyo
Publication country
Japan
Document type
Article
Language
English
Keyword (fr)
Aluminium Arséniure Dimension Fluctuation Gallium Arséniure Hétérojonction Photoluminescence Puits potentiel Superréseau
Keyword (en)
Aluminium Arsenides Dimensions Fluctuations Gallium Arsenides Heterojunction Photoluminescence Potential well Superlattice
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
9479186

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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