Formation of Al-doped ZnO films by dc magnetron reactive sputtering
- Author
- CHEN, M1 2 ; PEI, Z. L2 ; SUN, C2 ; WEN, L. S2 ; WANG, X1
[1] Ion Beam Laboratory, Shanghai Institute of metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
[2] Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110015, China - Source
Materials letters (General ed.). 2001, Vol 48, Num 3-4, pp 194-198 ; ref : 18 ref
- CODEN
- MLETDJ
- ISSN
- 0167-577X
- Scientific domain
- Crystallography; Chemical industry parachemical industry; Condensed state physics; Polymers, paint and wood industries
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition aluminium Caractérisation Conductivité électrique Couche mince Cristallochimie Croissance cristalline en phase vapeur Effet Hall Energie liaison Etude expérimentale Magnétron Matériau dopé Matériau semiconducteur Orientation cristalline Orientation préférentielle Pulvérisation réactive Spectre UV visible Transmission optique Zinc oxyde
- Keyword (en)
- Aluminium additions Characterization Electrical conductivity Thin films Crystal chemistry Crystal growth from vapors Hall effect Binding energy Experimental study Magnetrons Doped materials Semiconductor materials Crystal orientation Preferred orientation Reactive sputtering Ultraviolet visible spectrum Optical transmission Zinc oxides
- Keyword (es)
- Caracterización Orientación preferencial Espectro UV visible Transmisión óptica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 948463
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0167-577X(00)00302-5 
https://dx.doi.org/10.1016/S0167-577X(00)00302-5
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