Pulsed laser melting of amorphous silicon layers
- Author
- NARAYAN, J; WHITE, C. W
Oak Ridge National Laboratory - Source
Applied physics letters. 1984, Vol 44, Num 1, pp 35-37 ; ref : 12 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Arsenic ion atomique Couche mince Dose rayonnement Etat amorphe Etude expérimentale Implantation ion Impureté arsenic Irradiation laser Microscopie électronique transmission Microstructure Non métal Rétrodiffusion Rutherford Silicium ion atomique Silicium
- Keyword (en)
- Thin film Radiation dose Amorphous state Experimental study Ion implantation Laser irradiation Transmission electron microscopy Microstructure Non metal Rutherford backscattering Silicon
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 9608204
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.94594 
https://dx.doi.org/10.1063/1.94594
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