CARACTERISATION DES PARAMETRES ELECTRIQUES FONDAMENTAUX DE COUCHES IMPLANTEES DANS LE SILICIUM, DANS LE BUT DE REALISER DES COMPOSANTS ELECTRONIQUES PARTICULIERS
- Author
- BERNARD J; GUERNET G
CEN, LAB. ELECTRON. TECHNOL. INF., 38-GRENOBLE - Source
- DGRST-70 7 2439; FR.; DA. 1972; PP. (1-12); H.T. 7; BIBL. 6 REF.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)
- Document type
- Report
- Language
- French
- Keyword (fr)
- IMPLANTATION IONIQUE TRANSISTOR EFFET CHAMP TRANSISTOR MOS TRANSISTOR HAUTE FREQUENCE TRES HAUTE FREQUENCE BASE PORTEUR CHARGE DUREE VIE RESISTANCE ELECTRIQUE RESISTANCE COUCHE SILICIUM ION BORE TECHNOLOGIE ELECTROMAGNETISME ELECTRONIQUE
- Keyword (en)
- ELECTROMAGNETISM ELECTRONICS
- Keyword (es)
- ELECTROMAGNETISMO ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7314500374
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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Europe PubMed Central access
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