ELECTRIC-FIELD-INDUCED INTERFERENCE EFFECTS AT THE GROUND EXCITATION LEVEL IN GAAS
- Author
- EVANGELISTI F; FROVA A; FISCHBACH JU
PHYS. INST., UNIV. STUTTGART, STUTTGART, GER. - Source
- PHYS. REV. LETTERS; U.S.A.; DA. 1972; VOL. 29; NO 15; PP. 1001-1004; BIBL. 13 REF.
- Document type
- Serial Issue
- Language
- English
- Keyword (fr)
- EXCITON ARSENIURE GALLIUM ETAT FONDAMENTAL INTERFERENCE REFLEXION ELECTROOPTIQUE EFFET CHAMP ELECTRIQUE CHAMP ELECTRIQUE MATERIAU SEMICONDUCTEUR COUCHE APPAUVRISSEMENT BARRIERE SCHOTTKY INTERFACE METAL SEMICONDUCTEUR INTERFACE OR ARSENIURE GALLIUM ELECTROMAGNETISME ELECTRONIQUE
- Keyword (en)
- ELECTROMAGNETISM ELECTRONICS
- Keyword (es)
- ELECTROMAGNETISMO ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7314502762
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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