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EFFECT OF CONTACT RESISTANCE ON GUNN-DIODE RISETIMES

Author
EDWARDS D; KELLETT G; TURNER P; MYERS F
PLESSEY CO., CASWELL, TOWCESTER, NORTHANTS., ENGL.
Source
ELECTRON. LETTERS; G.B.; DA. 1972; VOL. 8; NO 24; PP. 596-597; BIBL. 3 REF.
Document type
Serial Issue
Language
English
Keyword (fr)
RESISTANCE CONTACT TEMPS MONTEE DIODE DIODE GUNN OSCILLATEUR GUNN OSCILLATEUR HYPERFREQUENCE REGIME IMPULSION COMMUTATION GENERATEUR IMPULSION CONTACT ELECTRIQUE ACTION ELECTROMAGNETISME ELECTRONIQUE
Keyword (en)
ELECTROMAGNETISM ELECTRONICS
Keyword (es)
ELECTROMAGNETISMO ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7314502803

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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