ELECTRICAL CONTACTS TO ION CLEANED N-TYPE GALLIUM ARSENIDE
- Author
- WALKER GH; CONWAY EJ
NASA, LANGLEY RES. CENT., HAMPTON, VA - Source
- I.E.E.E. TRANS. PARTS HYBR. PACKAG.; U.S.A.; DA. 1972; VOL. 8; NO 4; PP. 49-50; BIBL. 6 REF.
- Document type
- Serial Issue
- Language
- English
- Keyword (fr)
- ARSENIURE GALLIUM CONDUCTIVITE TYPE N CONTACT ELECTRIQUE INTERFACE INTERFACE METAL SEMICONDUCTEUR INTERFACE ARGENT ARSENIURE GALLIUM TRAITEMENT SURFACE EVAPORATION SOUS VIDE COURANT ELECTRIQUE RESISTANCE CONTACT NETTOYAGE BOMBARDEMENT IONIQUE TECHNOLOGIE AUGMENTATION ELECTROMAGNETISME ELECTRONIQUE
- Keyword (en)
- ELECTROMAGNETISM ELECTRONICS
- Keyword (es)
- ELECTROMAGNETISMO ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7314505201
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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