DETERMINATION OF THE BULK CARRIER LIFETIME IN THE LOW-DOPED REGION OF A SILICON POWER DIODE, BY THE METHOD OF OPEN CIRCUIT VOLTAGE DECAY
- Author
- BASSETT RJ; FULOP W; HOGARTH CA
WESTINGHOUSE BRAKE-ENGLISH ELECTR. SEMICOND., CHIPPENHAM, WILTS. - Source
- INTERNATION. J. ELECTRON.; G.B.; DA. 1973; VOL. 35; NO 2; PP. 177-192; BIBL. 6 REF.
- Document type
- Serial Issue
- Language
- English
- Keyword (fr)
- DIODE DIODE PUISSANCE PORTEUR CHARGE DUREE VIE SILICIUM STRUCTURE MULTICOUCHE STRUCTURE P+LN+ ELECTROMAGNETISME ELECTRONIQUE
- Keyword (en)
- ELECTROMAGNETISM ELECTRONICS
- Keyword (es)
- ELECTROMAGNETISMO ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7314512289
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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