Pascal and Francis Bibliographic Databases

Help

Export

Selection :

Permanent link
http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=PASCAL7314512406

ETUDE SUR L'EFFET GUNN DANS L'ARSENIURE DE GALLIUM EPITAXIE

Author
TESZNER JL
Source
AO-CNRS-8948; FR.; DA. 1973; PP. (67 P.); H.T. 54; ABS. ANGL. ALLEM.; BIBL. DISSEM.; (THESE DOCT SCI., SPEC. PHYS. SOLIDES; PARIS VI)
Document type
Thesis
Language
French
Keyword (fr)
EFFET GUNN ARSENIURE GALLIUM EFFET SURFACE CROISSANCE EPITAXIALE TRANSFERT INTERVALLEE ETUDE EXPERIMENTALE DIODE GUNN DIODE EPITAXIALE ETUDE THEORIQUE PROPRIETE ELECTRIQUE DOMAINE ELECTRIQUE ELECTROMAGNETISME ELECTRONIQUE PHYSIQUE SOLIDE
Keyword (en)
ELECTROMAGNETISM ELECTRONICS SOLID PHYSICS
Keyword (es)
ELECTROMAGNETISMO ELECTRONICA FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7314512406

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Searching the Web