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A MODIFIED GAAS IMPATT STRUCTURE FOR HIGH-EFFICIENCY OPERATION

Author
HO CHUNG HUANG
DAVID SARNOFF RES. CENT., PRINCETON, N.J.
Source
I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 5; PP. 482-486; BIBL. 12 REF.
Document type
Serial Issue
Language
English
Keyword (fr)
DIODE IMPATT DIODE EFFET PERCAGE STRUCTURE MULTICOUCHE STRUCTURE P+N+NN+ ARSENIURE GALLIUM RENDEMENT ELEVE ELECTROMAGNETISME ELECTRONIQUE
Keyword (en)
ELECTROMAGNETISM ELECTRONICS
Keyword (es)
ELECTROMAGNETISMO ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7314512421

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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