A TECHNIQUE FOR THE INVESTIGATION OF DEEP-LEVEL STATES IN DIFFUSED P-N JUNCTION DEVICES: APPLICATION TO GAAS ELECTROLUMINESCENT DIODES
- Author
- LO W; YANG ES
DEP. ELECTR. ENG. COMPUT. SCI., COLUMBIA UNIV., NEW YORK, N.Y. - Source
- I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 8; PP. 684-691; BIBL. 17 REF.
- Document type
- Serial Issue
- Language
- English
- Keyword (fr)
- DIODE DIODE ELECTROLUMINESCENTE ARSENIURE GALLIUM METHODE ANALYTIQUE CARACTERISTIQUE COURANT TENSION JONCTION CARACTERISTIQUE FONCTIONNEMENT BANDE INTERDITE NIVEAU PROFOND RECOMBINAISON PORTEUR CHARGE ELECTROMAGNETISME ELECTRONIQUE
- Keyword (en)
- ELECTROMAGNETISM ELECTRONICS
- Keyword (es)
- ELECTROMAGNETISMO ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7314512653
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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