EFFECT OF COULOMB SCATTERING ON SILICON SURFACE MOBILITY.
- Author
- CHENG YC; SULLIVAN EA
BELL-NORTH. RES., OTTAWA, ONT., CAN. - Source
- J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 1; PP. 187-192; BIBL. 16 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- STRUCTURE COMPOSEE STRUCTURE MOS PORTEUR CHARGE COUCHE INVERSION MOBILITE PORTEUR CHARGE DIFFUSION COULOMB ELECTROMAGNETISME ELECTRONIQUE
- Keyword (en)
- ELECTROMAGNETISM ELECTRONICS
- Keyword (es)
- ELECTROMAGNETISMO ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7530006801
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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