INTERFACE-STATE GENERATION BY GOLD DIFFUSION THROUGH SIO2 FILMS ON SILICON: MOS AND NEUTRON-ACTIVATION RESULTS.
- Author
- SCHMIDT PF; ADDA LP
BELL TELEPHONE LAB., ALLENTOWN, PA. 18103 - Source
- J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 4; PP. 1826-1833; BIBL. 16 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- STRUCTURE COMPOSEE STRUCTURE MOS IRRADIATION NEUTRON INTERFACE GENERATION DIFFUSION ETAT ELECTRONIQUE INTERFACE INTERFACE OXHDE SEMICONDUCTEUR DIFFUSION OR ELECTROMAGNETISME ELECTRONIQUE PHYSIQUE SOLIDE
- Keyword (en)
- ELECTROMAGNETISM ELECTRONICS SOLID PHYSICS
- Keyword (es)
- ELECTROMAGNETISMO ELECTRONICA FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Electronics Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7530011103
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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