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FORMATION OF INTERFACE STATES AND DEFECTS IN GAAS-ALXGA1-XAS DH LASERS UNDER ROOM-TEMPERATURE CW OPERATION.

Author
YANG ES
DEP. ELECTR. ENG. COMPUT. SCI., COLUMBIA UNIV., NEW YORK, N.Y. 10027
Source
J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3801-3805; BIBL. 17 REF.
Document type
Article
Language
English
Keyword (fr)
LASER SEMICONDUCTEUR HETEROJONCTION HETEROJONCTION DOUBLE TEMPERATURE AMBIANTE LASER CONTINU FIABILITE OPTIQUE
Keyword (en)
OPTICS
Keyword (es)
OPTICA
Classification
Pascal
001 Exact sciences and technology / 001B Physics

Discipline
Theoretical physics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7530051455

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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