CARACTERISATION DES DIFFERENTES OPERATIONS D'UN PROCESSUS TECHNOLOGIQUE EN VUE DE L'OBTENTION DE CIRCUITS INTEGRES HAUTE TENSION.
- Author
- MARTINOT H; BIELLE DASPET D; SCHUTTLER R; ANDRE B; CABOT J; PINEL J; CASTANER L; ELLOUZ E; MARTINEZ J; ROIZES A
LAB. AUTOM. ANAL. SYST., CNRS.; CENT. ETUDE SPAT. RAYONNEM.; CENT. ETUD. RECH. TOULOUSE, O.N.E.R.A., TOULOUSE - Source
- DGRST-7270532; FR.; DA. 1974; PP. (50P.); H.T. 43; BIBL. 1 P. 1/2; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)
- Document type
- Report
- Language
- French
- Keyword (fr)
- TRANSISTOR TRANSISTOR HAUTE FREQUENCE TECHNOLOGIE PLANAIRE EPITAXIE CARACTERISTIQUE ELECTRIQUE PORTEUR CHARGE DUREE VIE METHODE MESURE CONTRAINTE THERMIQUE FABRICATION MICROELECTRONIQUE CROISSANCE CRISTALLINE IMPURETE PROFIL DOPAGE ELECTROMAGNETISME ELECTRONIQUE
- Keyword (en)
- ELECTROMAGNETISM ELECTRONICS
- Keyword (es)
- ELECTROMAGNETISMO ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7530053490
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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