CARACTERISATION DE L'ASGA IMPLANTE PAR SPECTROSCOPIE "RAMAN" - APPLICATION AUX DIODES ELECTROLUMINESCENTES.
- Author
- BESERMAN; MORHANGE; SEGUIN; SUDRES; ASSEMAT
UNIV. PARIS VI, LAB. PHYS. SOLIDES, 75005 PARIS - Source
- VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 119-125; BIBL. 7 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)
- Document type
- Conference Paper
- Language
- French
- Keyword (fr)
- FABRICATION MICROELECTRONIQUE IMPLANTATION ION ARSENIURE COMPOSE GALLIUM SPECTROMETRIE RAMAN DIODE DIODE ELECTROLUMINESCENTE ARSENIURE GALLIUM ELECTROMAGNETISME ELECTRONIQUE
- Keyword (en)
- ELECTROMAGNETISM ELECTRONICS
- Keyword (es)
- ELECTROMAGNETISMO ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7530061233
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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Europe PubMed Central access
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