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CARACTERISATION DE L'ASGA IMPLANTE PAR SPECTROSCOPIE "RAMAN" - APPLICATION AUX DIODES ELECTROLUMINESCENTES.

Author
BESERMAN; MORHANGE; SEGUIN; SUDRES; ASSEMAT
UNIV. PARIS VI, LAB. PHYS. SOLIDES, 75005 PARIS
Source
VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 119-125; BIBL. 7 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)
Document type
Conference Paper
Language
French
Keyword (fr)
FABRICATION MICROELECTRONIQUE IMPLANTATION ION ARSENIURE COMPOSE GALLIUM SPECTROMETRIE RAMAN DIODE DIODE ELECTROLUMINESCENTE ARSENIURE GALLIUM ELECTROMAGNETISME ELECTRONIQUE
Keyword (en)
ELECTROMAGNETISM ELECTRONICS
Keyword (es)
ELECTROMAGNETISMO ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7530061233

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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