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DETERMINATION OF THE CAPTURE RATE CN OF THE GOLD ACCEPTOR LEVEL FROM SINGLE INJECTION N+-I-N+ SILICON SCLC DIODES.

Author
KASSING R; LENZ H
INST. ANGEW. PHYS., UNIV. MUENSTER
Source
PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 25; NO 1; PP. 131-139; ABS. ALLEM.; BIBL. 25 REF.
Document type
Article
Language
English
Keyword (fr)
DIODE COURANT LIMITE CHARGE ESPACE SILICIUM CAPTURE PORTEUR CHARGE PORTEUR CHARGE STRUCTURE MULTIJONCTION STRUCTURE N+IN+ ELECTROMAGNETISME ELECTRONIQUE
Keyword (en)
ELECTROMAGNETISM ELECTRONICS
Keyword (es)
ELECTROMAGNETISMO ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7530065819

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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