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A THEORETICAL AND EXPERIMENTAL STUDY OF RECOMBINATION IN SILICON P-N JUNCTIONS.

Author
ASHBURN P; MORGAN DV; HOWES MJ
DEP. ELECTR. ELECTRON. ENG., UNIV. LEEDS, LEEDS, YORKS., ENGL.
Source
SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 6; PP. 569-577; BIBL. 15 REF.
Document type
Article
Language
English
Keyword (fr)
JONCTION JONCTION P+ N PORTEUR CHARGE RECOMBINAISON PORTEUR CHARGE SILICIUM ELECTROMAGNETISME ELECTRONIQUE
Keyword (en)
ELECTROMAGNETISM ELECTRONICS
Keyword (es)
ELECTROMAGNETISMO ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7530111115

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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