ELECTRICAL AND BACKSCATTERING MEASUREMENTS OF ARSENIC IMPLANTED SILICON.
- Author
- MULLER H; KRANZ H; RYSSEL H; SCHMID K
LEHRSTUHL INTEGRIERTE SCHALTUNGEN, TECH. UNIV. MUENCHEN, D-8 MUENCHEN 2, F.R.G. - Source
- APPL. PHYS.; GERM.; DA. 1974; VOL. 4; NO 2; PP. 115-123; BIBL. 25 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- SILICIUM IMPLANTATION IMPURETE DISTRIBUTION IMPURETE METHODE ELECTRIQUE RECUIT ANALYSE DIFFUSION ION DOPAGE AS DOPAGE B CRISTALLOGRAPHIE
- Keyword (en)
- CRISTALLOGRAPHY
- Keyword (es)
- CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7540008060
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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