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DETERMINATION OF THE SEMICONDUCTOR DOPING PROFILE RIGHT UP TO ITS SURFACE USING THE MIS CAPACITOR.

Author
ZIEGLER K; KLAUSMANN E; KAR S
INST. ANGEW. FESTKOERPERPHYS., 78 FREIBURG, WEST GER.
Source
SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 2; PP. 189-198; BIBL. 22 REF.
Document type
Article
Language
English
Keyword (fr)
SEMICONDUCTEUR DOPAGE DISTRIBUTION IMPURETE CRISTALLOGRAPHIE
Keyword (en)
CRISTALLOGRAPHY
Keyword (es)
CRISTALOGRAFIA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7540079759

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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