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DETERMINATION OF THE TEMPERATURE INDEPENDENCE OF THE CAPTURE CROSS-SECTION OF THE GOLD ACCEPTOR LEVEL FOR ELECTRONS IN N-TYPE SILICON.

Author
KASSING R; KAEHLER E; DUDECK I
INST. ANGEW. PHYS., UNIV. MUENSTER
Source
PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 30; NO 1; PP. 141-146; ABS. ALLEM.; BIBL. 12 REF.
Document type
Article
Language
English
Keyword (fr)
PIEGEAGE PORTEUR CHARGE CENTRE ACCEPTEUR NIVEAU IMPURETE TEMPERATURE SILICIUM IMPURETE OR PHYSIQUE SOLIDE
Keyword (en)
SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7630015650

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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