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EFFECT OF A SECONDARY PASSIVATING FILM OF SIO2 DEPOSITED BY CATHODE SPUTTERING ON THE PARAMETERS OF PLANAR TRANSISTORS.

Author
ORLINOV VI; GORANCHEV BG; HRISTOV DK; CHOUBRIEV ZH R
INST. ELECTRON., BULG. ACAD. SCI., SOFIA
Source
BULG. J. PHYS.; BULG.; DA. 1975; VOL. 2; NO 3; PP. 236-246; ABS. RUSSE; BIBL. 7 REF.
Document type
Article
Language
English
Keyword (fr)
TRANSISTOR TRANSISTOR PLANAR PASSIVATION PULVERISATION CATHODIQUE COUCHE MINCE DIOXYDE COMPOSE SILICIUM PARAMETRE TRANSISTOR DEPOT PULVERISATION REACTIVE DIOXYDE SILICIUM ELECTROMAGNETISME ELECTRONIQUE
Keyword (en)
ELECTROMAGNETISM ELECTRONICS
Keyword (es)
ELECTROMAGNETISMO ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7630080801

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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