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A THEORETICAL ASSESSMENT OF LOW AND HIGH BANDWIDTH GALLIUM ARSENIDE GERMANIUM AND SILICON AVALANCHE PHOTODIODES FOR OPTICAL COMMUNICATION SYSTEMS.

Author
GRIERSON JR; O'HARA S
POST OFF. RES. DEP., MARTLESHAM HEATH, IPSWICH, SUFFOLK1P 57RE, ENGL.
Source
SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 11; PP. 1003-1011; BIBL. 18 REF.
Document type
Article
Language
English
Keyword (fr)
DETECTEUR RAYONNEMENT DISPOSITIF PHOTOELECTRIQUE DIODE AVALANCHE TELECOMMUNICATION OPTIQUE SILICIUM GERMANIUM ARSENIURE COMPOSE GALLIUM BRUIT FOND ETUDE COMPARATIVE PHOTODIODE MATERIAU ARSENIURE GALLIUM ELECTROMAGNETISME ELECTRONIQUE OPTIQUE
Keyword (en)
ELECTROMAGNETISM ELECTRONICS OPTICS
Keyword (es)
ELECTROMAGNETISMO ELECTRONICA OPTICA
Classification
Pascal
001 Exact sciences and technology / 001B Physics

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics Theoretical physics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7630088713

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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