EFFECT OF COMPOSITION AND FORMING PARAMETERS ON THE CONDUCTANCE OF AMORPHOUS CHALCOGENIDE THRESHOLD SWITCHES.
- Autre titre
- EFFET DE LA COMPOSITION ET DES PARAMETRES DE FORMATION SUR LA CONDUCTANCE DE COMMUTATEURS DE SEUIL DE CHALCOGENURE AMORPHE (fr)
- Auteur
- ORMONDROYD RF; THOMPSON MJ; ALLISON J
DEP. ELECTRON. ELECTR. ENG., UNIV. SHEFFIELD, SHEFFIELD S1 3JD, U.K. - Source
- J. NON-CRYST. SOLIDS; NETHERL.; DA. 1975; VOL. 18; NO 3; PP. 375-393; BIBL. 14 REF.
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- MATERIAU AMORPHE COMMUTATION SEUIL VERRE CHALCOGENURE CONDUCTANCE ELECTRIQUE APPLICATION ELECTROMAGNETISME ELECTRONIQUE
- Mot clé (en)
- ELECTROMAGNETISM ELECTRONICS
- Mot clé (es)
- ELECTROMAGNETISMO ELECTRONICA
- Classification
- Discipline
- Electronics
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- PASCAL7630109106
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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