AVALANCHE BREAKDOWN VOLTAGE OF HYPERABRUPT SILICON P-N JUNCTIONS.
- Author
- GUPTA AK; TYAGI MS
INDIAN INST. TECHNOL., KANPUR 208016, INDIA - Source
- SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 4; PP. 342-344; BIBL. 8 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- JONCTION JONCTION P+ N SILICIUM DISRUPTION ELECTRIQUE AVALANCHE ELECTRONIQUE TENSION DISRUPTIVE JONCTION ABRUPTE JONCTION HYPERABRUPTE ELECTROMAGNETISME ELECTRONIQUE
- Keyword (en)
- ELECTROMAGNETISM ELECTRONICS
- Keyword (es)
- ELECTROMAGNETISMO ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7630187919
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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