ROOM-TEMPERATURE CW OPERATION OF GAINASP/INP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU M.
- Author
- HSIEH JJ; ROSSI JA; DONNELLY JP
LINCOLN LAB., M.I.T., LEXINGTON, MASS. 02173 - Source
- APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 12; PP. 709-711; BIBL. 16 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- LASER SEMICONDUCTEUR HETEROJONCTION HETEROJONCTION DOUBLE LASER IR RAYONNEMENT IR LASER CONTINU TEMPERATURE AMBIANTE EPITAXIE OPTIQUE
- Keyword (en)
- OPTICS
- Keyword (es)
- OPTICA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics
- Discipline
- Theoretical physics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7630286729
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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